Display device having an oxide semiconductor transistor

ABSTRACT

An object is to reduce parasitic capacitance of a signal line included in a liquid crystal display device. A transistor including an oxide semiconductor layer is used as a transistor provided in each pixel. Note that the oxide semiconductor layer is an oxide semiconductor layer which is highly purified by thoroughly removing impurities (hydrogen, water, or the like) which become electron suppliers (donors). Thus, the amount of leakage current (off-state current) can be reduced when the transistor is off. Therefore, a voltage applied to a liquid crystal element can be held without providing a capacitor in each pixel. In addition, a capacitor wiring extending to a pixel portion of the liquid crystal display device can be eliminated. Therefore, parasitic capacitance in a region where the signal line and the capacitor wiring intersect with each other can be eliminated.

TECHNICAL FIELD

The present invention relates to a liquid crystal display device.

BACKGROUND ART

Active matrix liquid crystal display devices including a plurality ofpixels arranged in matrix have been widespread. In general, the pixelincludes a transistor having a gate electrically connected to a scanline and a source and a drain one of which is electrically connected toa signal line, a capacitor having terminals one of which is electricallyconnected to the other of the source and drain of the transistor and theother of which is electrically connected to a wiring supplying a commonpotential (hereinafter, also referred to as a capacitor wiring), and aliquid crystal element having terminals one of which (a pixel electrode)is electrically connected to the other of the source and the drain ofthe transistor and the one of the terminals of the capacitor and theother of which (a counter electrode) is electrically connected to awiring supplying a counter potential.

An example of a structure of the above-described pixel is illustrated inFIGS. 13A to 13C. FIG. 13A is a top view of the pixel. Note that FIGS.13A to 13C are diagrams in which parts (a liquid crystal layer, thecounter electrode, and the like) of the liquid crystal element areomitted (a so-called active matrix substrate is illustrated). A pixel1000 illustrated in FIG. 13A is provided in a region surrounded by ascan line 1001 and a scan line 1002 which are arranged in parallel orsubstantially parallel to each other and a signal line 1003 and a signalline 1004 which are arranged perpendicularly or substantiallyperpendicularly to the scan lines 1001 and 1002. Further, the pixel 1000includes a transistor 1005, a capacitor 1006, and a pixel electrodelayer 1007. Note that a conductive layer (a capacitor wiring 1008) whichis to be one of electrode layers of the capacitor 1006 is arranged inparallel or substantially parallel to the scan lines 1001 and 1002 andis provided so as to be across the plurality of pixels.

FIG. 13B is a cross-sectional view taken along line A-B in FIG. 13A. Thetransistor 1005 includes a gate layer 1011 provided over a substrate1010, a gate insulating layer 1012 provided over the gate layer 1011, asemiconductor layer 1013 provided over the gate insulating layer 1012,one of a source layer and a drain layer 1014 a provided over one end ofthe semiconductor layer 1013, and the other of the source and drainlayers 1014 b provided over the other end of the semiconductor layer1013. The capacitor 1006 includes part of the capacitor wiring 1008, aninsulating layer (the gate insulating layer 1012) provided over thecapacitor wiring 1008, and the other of the source and drain layers 1014b provided over the insulating layer. In addition, the other of thesource and drain layers 1014 b is electrically connected to the pixelelectrode layer 1007 in a contact hole 1016 formed in an insulatinglayer 1015 provided over the transistor 1005 and the capacitor 1006.

FIG. 13C is a cross-sectional view taken along line C-D in FIG. 13A. Thesignal line 1003 intersects with the scan line 1001, the capacitorwiring 1008, and the scan line 1002 in a region 1017 a, a region 1017 b,and a region 1017 c respectively with the gate insulating layer 1012interposed therebetween. Therefore, an upper surface of the signal line1003 has a convex shape in the regions 1017 a, 1017 b, and 1017 c. Notethat it is apparent that the signal line 1004 also has the same uppersurface shape as the signal line 1003.

Note that in a liquid crystal display device including the pixel 1000illustrated in FIGS. 13A to 13C, the scan lines 1001 and 1002 and thecapacitor wiring 1008 are formed using the same conductive film, and thegate insulating layer 1012 in the transistor 1005 is also used as adielectric in the capacitor 1006. That is, it can be said that theliquid crystal display device is a liquid crystal display device whosemanufacturing process steps are reduced.

In the pixel 1000 illustrated in FIGS. 13A to 13C, the transistor 1005has a function of controlling input of a data signal which determines avoltage applied to the liquid crystal element (a potential applied tothe pixel electrode layer 1007), and the capacitor 1006 has a functionof holding the voltage applied to the liquid crystal element (thepotential applied to the pixel electrode layer 1007).

For example, in the case where the dielectric of the capacitor 1006 isformed with a silicon oxide film with a thickness of 0.1 μm, the area ofthe capacitor 1006 having a capacitance of 0.4 pF is approximately 1160μm². Here, when the size of the pixel is 42 μm×126 μm (a 4-inch VGApixel), the proportion of the area of the capacitor 1006 to the pixel isapproximately 22%, which causes a reduction in the aperture ratio. Notethat the capacitor 1006 can be eliminated in the above pixel structure.A certain amount of charge can be held without intentionally providingthe capacitor 1006 because the liquid crystal element itself has storagecapacitance. However, the relative permittivity of liquid crystal isabout 3 at the lowest, and the cell gap is 3 μm to 4 μm. Consequently,electrostatic capacitance is approximately 1/50 of that of the deviceusing the capacitor 1006 having a 0.1-μm-thick silicon oxide film as adielectric, and therefore, the area of the liquid crystal element isrequired to be approximately 58000 μm². Since this size is comparable tothat of the pixel with a size of 140 μm×420 μm, the resolution isreduced to approximately 60 ppi and charge can be held only when theliquid crystal display devices have a resolution of 60 ppi or lower. Inother words, when pixels are formed with a resolution of 60 ppi or more,the capacitor 1006 is required.

In the liquid crystal display device, by controlling a potential of thescan line 1001, the transistor 1005 is turned on and a potential of thesignal line 1003 is controlled as a data signal for the pixel 1000.Thus, a desired voltage can be applied to the liquid crystal elementincluded in the pixel 1000. The voltage is held by the capacitor 1006for a certain period, so that desired display can be performed in eachpixel for a certain period. The liquid crystal display devicesuccessively performs such operation for each pixel, whereby images(still images) are formed in a pixel portion. Further, the liquidcrystal display device displays a moving image by changing the imagessuccessively (e.g., 60 times per second (at a frame frequency of 60Hz)).

As described above, the moving image is formed of many still images.That is, strictly speaking, the moving image is not a continuous image.Accordingly, when fast moving images are displayed, residual images arereadily generated in display. In particular, in a liquid crystal displaydevice, each pixel maintains display from when a data signal is input tothe pixel to when the next data signal is input to the pixel; therefore,residual images tend to be apparent. In Patent Document 1, a techniqueto reduce residual images (referred to as “double-frame rate driving” ingeneral) is disclosed. Specifically, in Patent Document 1, the followingtechnique is disclosed: an image for interpolation is formed between twoimages displayed sequentially, and the image is inserted between twoimages displayed sequentially, so that residual images are reduced.

REFERENCE

[Patent Document] Japanese Published Patent Application No. H04-302289

DISCLOSURE OF INVENTION

It can be said that the above technique is a technique for increasingthe number of data signals input to each pixel per unit time. Therefore,in order to apply this technique to a liquid crystal display device, asignal line supplying data signals to each pixel needs to operate athigh speed. However, there is a possibility that parasitic capacitanceis generated between the signal line extending to the pixel portion andanother wiring extending to the pixel portion, and the parasiticcapacitance prevents high speed operation of the signal line.

Thus, an object of one embodiment of the present invention is to reduceparasitic capacitance of a signal line included in a liquid crystaldisplay device.

In a liquid crystal display device of one embodiment of the presentinvention, a transistor including an oxide semiconductor layer is usedas a transistor provided in each pixel. Note that the oxidesemiconductor layer is an oxide semiconductor layer which is highlypurified by thoroughly removing impurities (hydrogen, water, or thelike) which become electron suppliers (donors). The high-purified oxidesemiconductor layer has extremely few (close to zero) carriers due tohydrogen, oxygen deficiency, or the like, and the carrier density islower than 1×10¹²/cm³ or lower than 1×10¹¹/cm³. In other words, thecarrier density of the oxide semiconductor layer resulting fromhydrogen, oxygen deficiency, or the like is reduced to close to zero aspossible. Since the number of the carriers due to hydrogen, oxygendeficiency, or the like in the oxide semiconductor layer is extremelysmall, the leakage current (off-state current) of the transistor can bereduced when the transistor is off.

Thus, a voltage applied to the liquid crystal element can be heldwithout providing a capacitor in each pixel. Further, a capacitor wiringextending to the pixel portion of the liquid crystal display device canbe eliminated. Therefore, in the liquid crystal display device of oneembodiment of the present invention, parasitic capacitance generated ina region where a signal line and the capacitor wiring intersect witheach other does not exist. In contrast, in a conventional liquid crystaldisplay device, parasitic capacitance is generated in a region where asignal line and a scan line intersect with each other and a region wherethe signal line and a capacitor wiring intersect with each other. Thatis, parasitic capacitance of the signal line can be reduced.

Specifically, one embodiment of the present invention is a liquidcrystal display device. The liquid crystal display device includes: afirst scan line and a second scan line arranged in parallel orsubstantially parallel to each other; a first signal line and a secondsignal line arranged perpendicularly or a substantially perpendicularlyto the first scan line and the second scan line; and a transistorincluding an oxide semiconductor layer, in which a gate is electricallyconnected to the first scan line, one of a source and a drain iselectrically connected to the first signal line, and the other of thesource and the drain is electrically connected to a pixel electrodelayer. The pixel electrode layer is provided in a region surrounded bythe first scan line, the second scan line, the first signal line, andthe second signal line. The first signal line and the second signal lineintersect with the first scan line and the second scan line with aninsulating layer provided over the first scan line and the second scanline interposed therebetween. An upper surface of the first signal linehas a convex shape in a first region where the first signal lineintersects with the first scan line and in a second region where thefirst signal line intersects with the second scan line, and has a planarshape or a substantially planar shape in a region between the firstregion and the second region. In other words, the whole of the uppersurface of the first signal line exists coplanarly or substantiallycoplanarly in the whole region between the first region and the secondregion.

In the liquid crystal display device of one embodiment of the presentinvention, a transistor including an oxide semiconductor layer is usedas the transistor provided in each pixel. Thus, a capacitor provided ineach pixel can be eliminated. Specifically, even when the liquid crystaldisplay device has a resolution of 60 ppi or more, a voltage applied tothe liquid crystal element can be held without providing a capacitor ineach pixel. Accordingly, the aperture ratio of each pixel can beimproved. Further, a capacitor wiring extending to the pixel portion ofthe liquid crystal display device can be eliminated. That is, the liquidcrystal display device is a liquid crystal display device in whichparasitic capacitance of the signal line is reduced. Accordingly, in aliquid crystal display device of one embodiment of the presentinvention, a driving frequency of a signal line can be increased ascompared to that of a signal line in a conventional liquid crystaldisplay device. In other words, a liquid crystal display device of oneembodiment of the present invention is preferable as a liquid crystaldisplay device which is driven at a double-frame rate or a higher ratethan the double-frame rate.

BRIEF DESCRIPTION OF DRAWINGS

In the accompanying drawings:

FIGS. 1A to 1C are a top view and cross-sectional views illustrating anexample of a structure of a pixel of a liquid crystal display device;

FIG. 2 is a graph showing characteristics of transistors;

FIG. 3 is a circuit diagram for evaluating characteristics of atransistor;

FIG. 4 is a timing chart for evaluating characteristics of a transistor;

FIG. 5 is a graph showing characteristics of transistors;

FIG. 6 is a graph showing characteristics of transistors;

FIG. 7 is a graph showing characteristics of transistors;

FIGS. 8A to 8C are cross-sectional views each illustrating an example ofa structure of a pixel of a liquid crystal display device;

FIGS. 9A to 9C are cross-sectional views each illustrating an example ofa structure of a pixel of a liquid crystal display device;

FIGS. 10A and 10B are cross-sectional views each illustrating an exampleof a structure of a pixel of a liquid crystal display device;

FIGS. 11A to 11D are cross-sectional views illustrating an example of amanufacturing process of a transistor;

FIGS. 12A to 12F are diagrams illustrating examples of electronicdevices; and

FIGS. 13A to 13C are a top view and cross-sectional views illustratingan example of a structure of a pixel of a liquid crystal display device.

BEST MODE FOR CARRYING OUT THE INVENTION

Hereinafter, embodiments of the present invention will be described indetail with reference to the accompanying drawings. Note that thepresent invention is not limited to the description below, and it iseasily understood by those skilled in the art that a variety of changesand modifications can be made without departing from the spirit andscope of the present invention. Therefore, the present invention shouldnot be limited to the description of the embodiment below.

(Structure Example of Pixel)

First, an example of a structure of a pixel included in a liquid crystaldisplay device of one embodiment of the present invention is describedwith reference to FIGS. 1A to 1C. Specifically, an example of astructure of a pixel in a liquid crystal display device having astructure in which a liquid crystal material is interposed between onesubstrate provided with a pixel electrode and the other substrateprovided with a counter electrode (a liquid crystal display device inwhich a vertical electric field is applied to a liquid crystal material)is described with reference to FIGS. 1A to 1C.

FIG. 1A is a top view of the pixel. Note that FIG. 1A is a diagram inwhich parts (a liquid crystal layer, the counter electrode, and thelike) of the liquid crystal element are omitted (a so-called activematrix substrate is illustrated). A pixel 100 illustrated in FIG. 1A isprovided in a region surrounded by a scan line 101 and a scan line 102which are arranged in parallel or substantially parallel to each otherand a signal line 103 and a signal line 104 which are arrangedperpendicularly or substantially perpendicularly to the scan lines 101and 102. Further, a transistor 105 and a pixel electrode layer 107 areprovided in the pixel 100. In other words, the pixel 100 illustrated inFIG. 1A has a structure in which a component relating to the capacitor1006 is omitted from the pixel 1000 illustrated in FIG. 13A.

FIG. 1B is a cross-sectional view taken along line E-F in FIG. 1A. Thetransistor 105 includes: a gate layer 111 provided over a substrate 110;a gate insulating layer 112 provided over the gate layer 111; an oxidesemiconductor layer 113 provided over the gate insulating layer 112; oneof a source layer and a drain layer 114 a provided over one end of theoxide semiconductor layer 113; and the other of the source layer and thedrain layer 114 b over the other end of the oxide semiconductor layer113. Note that in the transistor 105 illustrated in FIGS. 1A and 1B, aprojection of the scan line 101 is used as a gate and a projection ofthe signal line 103 is used as one of a source and a drain. Thus, in thetransistor 105 illustrated in FIGS. 1A and 1B, the gate can be expressedas part of the scan line 101 and the one of the source and the drain canbe expressed as part of the signal line 103. The other of the sourcelayer and the drain layer 114 b is electrically connected to the pixelelectrode layer 107 in a contact hole 116 formed in an insulating layer115 provided over the transistor 105.

FIG. 1C is a cross-sectional view taken along line G-H in FIG. 1A. Thesignal line 103 intersects with the scan line 101 and the scan line 102in a region 117 a and a region 117 c respectively with an insulatinglayer (the gate insulating layer 112) interposed therebetween.Therefore, an upper surface of the signal line 103 has a convex shape inthe regions 117 a and 117 c. In addition, an upper surface of the signalline 103 has a planar shape or a substantially planar shape in a region117 b between the region 117 a and the region 117 c. In other words, theupper surface of the signal line 103 exists coplanarly or substantiallycoplanarly in the whole region 117 b between the region 117 a and theregion 117 c. This is because a capacitor wiring is not provided in theliquid crystal display device including the pixel 100. Note that it isapparent that the signal line 104 also has the same upper surface shapeas the signal line 103.

As described above, the transistor 105 illustrated in FIGS. 1A to 1Cincludes the oxide semiconductor layer 113 as a semiconductor layer. Asan oxide semiconductor used for the oxide semiconductor layer 113, anIn—Sn—Ga—Zn—O-based oxide semiconductor which is a four-component metaloxide; an In—Ga—Zn—O-based oxide semiconductor, an In—Sn—Zn—O-basedoxide semiconductor, an In—Al—Zn—O-based oxide semiconductor, aSn—Ga—Zn—O-based oxide semiconductor, an Al—Ga—Zn—O-based oxidesemiconductor, or a Sn—Al—Zn—O-based oxide semiconductor which is athree-component metal oxide; an In—Zn—O-based oxide semiconductor, aSn—Zn—O-based oxide semiconductor, an Al—Zn—O-based oxide semiconductor,a Zn—Mg—O-based oxide semiconductor, a Sn—Mg—O-based oxidesemiconductor, or an In—Mg—O-based oxide semiconductor which is atwo-component metal oxide; or an In—O-based oxide semiconductor, aSn—O-based oxide semiconductor, or a Zn—O-based oxide semiconductorwhich is a one-component metal oxide can be used. Further, SiO₂ may becontained in the above oxide semiconductors. Here, for example, anIn—Ga—Zn—O-based oxide semiconductor is an oxide including at least In,Ga, and Zn, and there is no particular limitation on the compositionratio thereof. Further, the In—Ga—Zn—O-based oxide semiconductor maycontain an element other than In, Ga, and Zn.

For the oxide semiconductor layer 113, a thin film, represented by thechemical formula, InMO₃(ZnO)_(m) (m>0) can be used. Here, M representsone or more metal elements selected from Ga, Al, Mn, and Co. Forexample, M can be Ga, Ga and Al, Ga and Mn, Ga and Co, or the like.

In order to suppress variation in electrical characteristics, theabove-described oxide semiconductor is highly purified to exist inelectrically i-type (intrinsic) by intentionally removing impuritiessuch as hydrogen, moisture, a hydroxyl group, or a hydride (alsoreferred to as a hydrogen compound) which is a factor of the variation.

Therefore, it is preferable that the oxide semiconductor contain aslittle hydrogen as possible. Further, the highly purified oxidesemiconductor has very few (close to zero) carriers which are derivedfrom hydrogen, oxygen deficiency, and the like and the carrier densityis less than 1×10¹²/cm³ or than 1×10¹¹/cm³. In other words, the densityof carriers derived from hydrogen, oxygen deficiency, and the like inthe oxide semiconductor layer is made as close to zero as possible.Since the oxide semiconductor layer has very few carriers derived fromhydrogen, oxygen deficiency, and the like, the amount of leakage current(off-state current) can be small when the transistor is off. It ispreferred that the amount of off-state current is small as possible. Inthe transistor including the above oxide semiconductor for asemiconductor layer, the current per micrometer of the channel width (W)has a value of 100 zA/μm (zeptoampere) or less, 10 zA/μm or less, or 1zA/μm or less. Furthermore, because there is no pn junction and no hotcarrier degradation, electrical characteristics of the transistor arenot adversely affected thereby.

The oxide semiconductor which is highly purified by throughout removinghydrogen contained in the oxide semiconductor layer as described aboveis used in a channel formation region of a transistor, whereby thetransistor with an extremely small amount of off-state current can beobtained. In other words, the circuit can be designed with the oxidesemiconductor layer that can be regarded as an insulator when thetransistor is off. On the other hand, when the transistor is on, thecurrent supply capability of the oxide semiconductor layer is expectedto be higher than the current supply capability of a semiconductor layerformed of amorphous silicon.

As the substrate 110, a glass substrate made of barium borosilicateglass, aluminoborosilicate glass, or the like can be used.

In the transistor 105, an insulating film serving as a base film may beprovided between the substrate 110 and the gate layer 111. The base filmhas a function of preventing diffusion of an impurity element from thesubstrate 110, and can be formed to have a single-layer structure or astacked structure using one or more of a silicon nitride film, a siliconoxide film, a silicon nitride oxide film, and a silicon oxynitride film.

As the gate layer 111, an element selected from aluminum (Al), copper(Cu), titanium (Ti), tantalum (Ta), tungsten (W), molybdenum (Mo),chromium (Cr), neodymium (Nd), and scandium (Sc), an alloy containingany of these elements, or a nitride containing any of these elements canbe used. A stacked structure of these materials can also be used.

As the gate insulating layer 112, an insulator such as a silicon oxidelayer, a silicon nitride layer, a silicon oxynitride layer, a siliconnitride oxide layer, an aluminum oxide layer, an aluminum nitride layer,an aluminum oxynitride layer, an aluminum nitride oxide layer, and ahafnium oxide layer formed by a plasma CVD method, a sputtering method,or the like can be used. Alternatively, a stacked structure of theseinsulators may be used. For example, by a plasma CVD method, a siliconnitride layer (SiN_(y) (y>0)) with a thickness greater than or equal to50 nm and less than or equal to 200 nm is formed as a first gateinsulating layer, and a silicon oxide layer (SiO_(x) (x>0)) with athickness greater than or equal to 5 nm and less than or equal to 300 nmcan be stacked over the first gate insulating layer, as a second gateinsulating layer.

As a material of the one of the source and drain layers 114 a and theother of the source and drain layers 114 b, an element selected fromaluminum (Al), chromium (Cr), copper (Cu), tantalum (Ta), titanium (Ti),molybdenum (Mo), and tungsten (W), an alloy containing any of theseelements, a nitride containing any of these elements can be used. Astacked structure of these materials can also be used. Alternatively, astructure may be employed in which a high-melting-point metal layer oftitanium (Ti), molybdenum (Mo), tungsten (W), or the like is stackedover and/or below a metal layer of aluminum (Al), copper (Cu), or thelike. In addition, heat resistance can be improved by using an aluminumalloy to which an element (Si, Nd, Sc, or the like) which preventsgeneration of a hillock or a whisker in an aluminum (Al) film is added.

Note that the one of the source and drain layers 114 a is part of thesignal line 103 in the above-described liquid crystal display device.Therefore, in terms of high-speed driving of the signal line 103, thesource layer and the drain layer are preferably formed using alow-resistance conductive material so that a signal delay is suppressed.For example, the source layer and the drain layer are preferably formedof a low-resistance conductive material such as copper (Cu) or an alloyincluding copper (Cu) as a main structural element. Alternatively, thesource layer and the drain layer have a stacked structure which includesa layer including copper (Cu) or an alloy including copper (Cu) as amain structural element.

A capacitor is not provided in the pixel 100 in the above liquid crystaldisplay device. Therefore, in terms of holding of a data signal in thepixel 100, a metal nitride is preferably used as the source layer andthe drain layer in order to suppress the flow of carriers to the oxidesemiconductor layer. For example, a nitride such as titanium nitride ortungsten nitride is preferably used. Alternatively, a stacked structurecan be employed in which a layer in contact with the oxide semiconductorlayer is formed using a nitride such as titanium nitride or tungstennitride, and another conductive layer is formed thereover. For example,a stacked structure of tungsten nitride and copper (Cu), or the like canbe employed.

Alternatively, a conductive film to be the source and drain layers 114 aand 114 b (including a wiring layer formed using the same layer as theselayers 114 a and 114 b) may be formed using a conductive metal oxide. Asthe conductive metal oxide, indium oxide (In₂O₃), tin oxide (SnO₂), zincoxide (ZnO), indium oxide-tin oxide (In₂O₃—SnO₂, which is abbreviated toITO), indium oxide-zinc oxide (In₂O₃—ZnO), or any of these metal oxidein which silicon oxide is contained can be used.

As the insulating layer 115, typically, an inorganic insulating filmsuch as a silicon oxide film, a silicon oxynitride film, an aluminumoxide film, or an aluminum oxynitride film can be used.

As the insulating layer 115, an inorganic insulating film such as asilicon nitride film, an aluminum nitride film, a silicon nitride oxidefilm, or an aluminum nitride oxide film can be used.

A planarization insulating film may be formed over the insulating layer115 in order to reduce surface roughness caused by the transistor 105.As the planarization insulating film, an organic material such as apolyimide, an acrylic resin, or a benzocyclobutene-based resin can beused. Other than such organic materials, it is also possible to use alow-dielectric constant material (a low-k material) or the like. Notethat the planarization insulating film may be formed by stacking aplurality of insulating films formed from these materials.

(Off-State Current of Transistor 105)

Next, results obtained by measurement of the off-state current of atransistor including a highly purified oxide semiconductor layer will bedescribed.

First, a transistor with a sufficiently large channel width W of 1 m wasprepared in consideration of the fact that the off-state current of atransistor including a highly purified oxide semiconductor layer isextremely small, and then the off-state current was measured. FIG. 2shows the results obtained by measurement of the off-state current of atransistor with a channel width W of 1 m. In FIG. 2, the horizontal axisshows a gate voltage V_(G) and the vertical axis shows a drain currentI_(D). In the case where the drain voltage V_(D) is +1 V or +10 V andthe gate voltage V_(G) is within the range of −5 V to −20 V, theoff-state current of the transistor was found to be smaller than orequal to 1×10⁻¹² A which is the detection limit. Moreover, it was foundthat the off-state current density of the transistor (per unit channelwidth (1 μm)) is lower than or equal to 1 aA/μm (1×10⁻¹⁸ A/μm).

Next will be described the results obtained by measurement of theoff-state current of the transistor including a highly purified oxidesemiconductor layer more accurately. As described above, the off-statecurrent of the transistor including a highly purified oxidesemiconductor layer was found to be smaller than or equal to 1×10⁻¹² A,which is the detection limit of the measurement equipment. Here, theresults obtained by more accurate measurement of the off-state current(the value smaller than or equal to the detection limit of measurementequipment in the above measurement), with the use of an element forcharacteristic evaluation, will be described.

First, the element for characteristic evaluation used in a method formeasuring current will be described with reference to FIG. 3.

In the element for characteristic evaluation in FIG. 3, threemeasurement systems 800 are connected in parallel. The measurementsystem 800 includes a capacitor 802, a transistor 804, a transistor 805,a transistor 806, and a transistor 808. The transistor including ahighly purified oxide semiconductor layer is used as the transistors 804and 808.

In the measurement system 800, one of a source and a drain of thetransistor 804, one of terminals of the capacitor 802, and one of asource and a drain of the transistor 805 are connected to a power source(a power source for supplying V2). The other of the source and the drainof the transistor 804, one of a source and a drain of the transistor808, the other of the terminals of the capacitor 802, and a gate of thetransistor 805 are electrically connected to one another. The other ofthe source and the drain of the transistor 808, one of a source and adrain of the transistor 806, and a gate of the transistor 806 areelectrically connected to a power source (a power source for supplyingV1). The other of the source and the drain of the transistor 805, theother of the source and the drain of the transistor 806 are electricallyconnected to an output terminal.

A potential V_(ext) _(_) _(b2) for controlling an on state and an offstate of the transistor 804 is supplied to a gate of the transistor 804.A potential V_(ext) _(_) _(b1) for controlling an on state and an offstate of the transistor 808 is supplied to a gate of the transistor 808.A potential V_(out) is output from the output terminal.

Next, a method for measuring current with the use of the element forcharacteristic evaluation will be described.

First, an initial period in which a potential difference is applied tomeasure the off-state current will be described briefly. In the initialperiod, the potential V_(ext) _(_) _(b1) for turning on the transistor808 is input to the gate of the transistor 808, and a potential V1 issupplied to a node A that is a node electrically connected to the otherof the source and the drain of the transistor 804 (i.e., the nodeelectrically connected to the one of the source and the drain of thetransistor 808, the other terminal of the capacitor 802, and the gate ofthe transistor 805). Here, the potential V1 is, for example, a highpotential. The transistor 804 is turned off.

After that, the potential V_(ext) _(_) _(b1) for turning off thetransistor 808 is input to the gate of the transistor 808 so that thetransistor 808 is turned off. After the transistor 808 is turned off,the potential V1 is set to low. Still, the transistor 804 is off. Thepotential V2 is the same potential as the potential V1. Thus, theinitial period is completed. In a state where the initial period iscompleted, a potential difference is generated between the node A andthe one of the source and the drain of the transistor 804, and also, apotential difference is generated between the node A and the other ofthe source and the drain of the transistor 808. Therefore, charge flowsslightly through the transistor 804 and the transistor 808. That is, theoff-state current flows.

Next, a measurement period of the off-state current is brieflydescribed. In the measurement period, the potential (V2) of the one ofthe source and the drain of the transistor 804 and the potential (V1) ofthe other of the source and the drain of the transistor 808 are set tolow and fixed. On the other hand, the potential of the node A is notfixed (the node A is in a floating state) in the measurement period.Accordingly, charge flows through the transistors 804 and 808 and theamount of charge held in the node A varies over time. Further, as theamount of charge held in the node A varies, the potential of the node Avaries. That is to say, the output potential V_(out) of the outputterminal also varies.

FIG. 4 shows details of the relation (timing chart) between potentialsin the initial period in which the potential difference is applied andin the following measurement period.

In the initial period, first, the potential V_(ext) _(_) _(b2) is set toa potential (high potential) at which the transistor 804 is turned on.Thus, the potential of the node A comes to be V2, that is, a lowpotential (V_(SS)). Note that a low potential (V_(SS)) is notnecessarily supplied to the node A. After that, the potential V_(ext)_(_) _(b2) is set to a potential (low potential) at which the transistor804 is turned off, whereby the transistor 804 is turned off. Next, thepotential V_(ext) _(_) _(b1) is set to a potential (a high potential) atwhich the transistor 808 is turned on. Thus, the potential of the node Acomes to be V1, that is, a high potential (V_(DD)). After that, thepotential V_(ext) _(_) _(b1) is set to a potential at which thetransistor 808 is turned off. Accordingly, the node A is brought into afloating state and the initial period is completed.

In the following measurement period, the potential V1 and the potentialV2 are individually set to potentials at which charge flows to or fromthe node A. Here, the potential V1 and the potential V2 are lowpotentials (V_(SS)). Note that at the timing of measuring the outputpotential V_(out), it is necessary to operate an output circuit; thus,V1 is set to a high potential (V_(DD)) temporarily in some cases. Theperiod in which V1 is a high potential (V_(DD)) is set to be short sothat the measurement is not influenced.

When the potential difference is generated and the measurement period isstarted as described above, the amount of charge hold in the node Avaries over time, which varies the potential of the node A. This meansthat the potential of the gate of the transistor 805 varies and thus,the output potential V_(out) of the output terminal also varies overtime.

A method for calculating the off-state current on the basis of theobtained output potential V_(out) is described below.

The relation between the potential V_(A) of the node A and the outputpotential V_(out) is obtained in advance before the off-state current iscalculated. With this, the potential V_(A) of the node A can be obtainedusing the output potential V_(out). In accordance with the aboverelation, the potential V_(A) of the node A can be expressed as afunction of the output potential V_(out) by the following equation.

V _(A) =F(Vout)  [FORMULA 1]

Charge Q_(A) of the node A can be expressed by the following equationwith the use of the potential V_(A) of the node A, capacitance C_(A)connected to the node A, and a constant (const). Here, the capacitanceC_(A) connected to the node A is the sum of the capacitance of thecapacitor 802 and other capacitance.

Q _(A) =C _(A) V _(A)+const  [FORMULA 2]

Since a current I_(A) of the node A is obtained by differentiatingcharge flowing to the node A (or charge flowing from the node A) withrespect to time, the current I_(A) of the node A is expressed by thefollowing equation.

$\begin{matrix}{{I_{A} \equiv \frac{\Delta \; Q_{A}}{\Delta \; t}} = \frac{{C_{A} \cdot \Delta}\; {F({Vout})}}{\Delta \; t}} & \left\lbrack {{FORMULA}\mspace{14mu} 3} \right\rbrack\end{matrix}$

In this manner, the current I_(A) of the node A can be obtained from thecapacitance C_(A) connected to the node A and the output potentialV_(out) of the output terminal.

In accordance with the above method, it is possible to measure a leakagecurrent (off-state current) which flows between a source and a drain ofa transistor in an off state.

Here, the transistor 804 and the transistor 808 were formed using ahighly purified oxide semiconductor with a channel length L of 10 μm anda channel width W of 50 μm. In addition, in the measurement systems 800which are arranged in parallel, values of the capacitance of thecapacitors 802 were 100 fF, 1 pF, and 3 pF, respectively.

Note that in the above-described measurement, V_(DD) was 5 V and V_(SS)was 0 V. In the measurement period, the potential V1 was basically setto V_(SS) and set to V_(DD) only in a period of 100 milliseconds every10 seconds to 300 seconds, and V_(out) was measured. Further, Δt whichwas used in calculation of a current I which flows through the elementwas about 30000 sec.

FIG. 5 shows the relation between elapsed time Time in measuring thecurrent and the output potential V_(out). According to FIG. 5, thepotential varies over time.

FIG. 6 shows the off-state current at room temperature (25° C.)calculated based on the above current measurement. Note that FIG. 6shows the relation between a source-drain voltage V of the transistor804 or the transistor 808 and an off-state current I. According to FIG.6, the off-state current was about 40 zA/μm under the condition that thesource-drain voltage was 4 V. In addition, the off-state current wasless than or equal to 10 zA/μm under the condition where thesource-drain voltage was 3.1 V. Note that 1 zA represents 10⁻²¹ A.

FIG. 7 shows the off-state current in an environment at a temperature of85° C., which was calculated based on the above current measurement.FIG. 7 shows the relation between a source-drain voltage V of thetransistor 804 or the transistor 808 and an off-state current I in anenvironment at 85° C. According to FIG. 7, the off-state current wasless than or equal to 100 zA/μm under the condition where thesource-drain voltage was 3.1 V.

From the above results, it was confirmed that the off-state current canbe sufficiently small in a transistor including a highly purified oxidesemiconductor layer.

(Liquid Crystal Display Device Including Pixel 100)

In the liquid crystal display device disclosed in this specification,the transistor 105 including an oxide semiconductor layer is used as atransistor provided in each pixel. Since the off-state current of thetransistor 105 including the oxide semiconductor layer is small, in theliquid crystal display device, a voltage applied to a liquid crystalelement can be held without providing a capacitor in each pixel.Accordingly, the aperture ratio of each pixel can be improved. Inaddition, a capacitor wiring extending to a pixel portion of the liquidcrystal display device can be eliminated. Therefore, parasiticcapacitance due to the capacitor wiring does not exist in the liquidcrystal display device disclosed in this specification. Specifically,there is no parasitic capacitance such as capacitance provided in aregion where a signal line and a capacitor wiring intersect with eachother with an insulating layer interposed therebetween. As a result, thedriving frequency of the signal line can be improved in the liquidcrystal display device disclosed in this specification. In other words,the liquid crystal display device disclosed in this specification ispreferable as a liquid crystal display device which is driven at adouble-frame rate or a higher rate than the double-frame rate.

In the case of performing driving at a double-frame rate or a higherrate than that the double-frame rate, the frequency of rewriting a datasignal in each pixel is increased. That is, a period in which a voltageapplied to a liquid crystal element in each pixel becomes shorter.Accordingly, variations in the voltage applied to the liquid crystalelement (deterioration (change) in display in each pixel) can be furtherreduced. In addition, similar effects can be obtained in the case wherethe liquid crystal display device disclosed in this specification isdriven by a field sequential system. In other words, it is preferable toemploy field sequential driving for the liquid crystal display devicedisclosed in this specification.

In particular, the liquid crystal display device disclosed in thisspecification is highly effective when used as a large-sized liquidcrystal display device (e.g., having 40 inches or more in size). As thesize of a liquid crystal display device is increased, data signal delayor the like due to wiring resistance or the like easily occurs. Incontrast, in the liquid crystal display device disclosed in thisspecification, parasitic capacitance generated in a signal line isreduced, so that data signal delay or the like can be reduced. Further,in the case where a small-sized liquid crystal display device and alarge-sized one have the same number of pixels, each pixel included inthe large-sized one is larger in size. This means that the capacitanceof the liquid crystal element itself becomes large. Therefore, inaddition to the use of the transistor 105 including an oxidesemiconductor layer in each pixel, the large capacitance of the liquidcrystal element itself contributes to reduction in the variation of thevoltage applied to the liquid crystal element.

Moreover, the liquid crystal display device disclosed in thisspecification is highly effective when used as a liquid crystal displaydevice having high definition (a large number of pixels) (e.g., a fullhigh-definition (FHD) one and a one having a resolution of 2K4K ormore). The number of wirings provided in a pixel portion is increased inaccordance with higher definition (an increase in the number of pixels)of a liquid crystal display device, so that parasitic capacitancegenerated in the signal line is readily increased. In contrast, since acapacitor wiring is not provided in the liquid crystal display devicedisclosed in this specification, an increase in parasitic capacitancecan be reduced. In addition, in the case where a liquid crystal displaydevice which has a large number of pixels and a liquid crystal displaydevice which has a small number of pixels have the same size, the wiringdensity in a pixel portion of the former device is increased. This meansthat the aperture ratio of each pixel is decreased. Moreover, in theliquid crystal display device disclosed in this specification, acapacitor is not provided in each pixel; therefore, a decrease in theaperture ratio can be suppressed.

In a conventional liquid crystal display device, holding characteristicsof a data signal of each pixel have mainly determined by characteristics(the value of the off-state current) of a transistor provided therein.However, by applying the transistor 105 including a highly purifiedoxide semiconductor layer as a transistor provided in each pixel, theholding characteristics of the data signal of each pixel is mainlydetermined by characteristics of a liquid crystal element (a currentflowing in a liquid crystal element). That is, in the liquid crystaldisplay device disclosed in this specification, leakage of chargethrough the liquid crystal element has larger influence than leakage ofcharge through the transistor 105. Therefore, it is preferable that asubstance having a high specific resistivity be used as the liquidcrystal material included in the liquid crystal element. Specifically,in the liquid crystal display device disclosed in this specification,the specific resistivity of the liquid crystal material is preferably1×10¹² Ω·cm or more, still preferably over 1×10¹³ Ω·cm, still furtherpreferably over 1×10¹⁴ Ω·cm. In the case where a liquid crystal elementis formed using the liquid crystal material, since there is apossibility of entry of impurities from an alignment film or a sealant,the resistivity of the liquid crystal element is preferably 1×10¹¹ Ω·cmor more, more preferably over 1×10¹² Ω·cm. Note that the value of thespecific resistivity in this specification is defined as that measuredat 20° C.

(Modified Example of Structure of Pixel)

A liquid crystal display device having the above-described structure isone embodiment of the present invention, and a liquid crystal displaydevice different from the liquid crystal display device having theabove-described structure in some points is included in the presentinvention.

Although only the gate insulating layer 112 is provided between thesignal line 103 and the scan line 101 and between the signal line 103and the scan line 102 (see FIG. 1C) in the aforementioned liquid crystaldisplay device, an oxide semiconductor layer 201 can be provided betweenthe signal line 103 and the gate insulating layer 112 (see FIG. 8A). Inother words, in a step for forming the oxide semiconductor layer 113included in the transistor 105 (a photolithography step and an etchingstep), an oxide semiconductor layer can be left without being etchedalso in a region where the signal line 103 is to be formed later. Thus,by providing the oxide semiconductor layer 201 between the signal line103 and the gate insulating layer 112, parasitic capacitance between thesignal line 103 and the scan line 101 and between the signal line 103and the scan line 102 can be further reduced.

Further, an oxide semiconductor layer can be selectively providedbetween the signal line 103 and the gate insulating layer 112. Forexample, an oxide semiconductor layer 202 a and an oxide semiconductorlayer 202 b can be selectively provided in the region 117 a where thesignal line 103 and the scan line 101 intersect with each other and inthe region 117 c where the signal line 103 and the scan line 102intersect with each other, respectively (see FIG. 8B). The oxidesemiconductor layers 202 a and 202 b can be selectively provided in partof the region 117 b in addition to the regions 117 a and 117 c (see FIG.8C). Note that a step occurs on the upper surface of the signal line 103in the region 117 b in this case due to the oxide semiconductor layerbetween the signal line 103 and the gate insulating layer 112; however,in this specification, the upper surface shape is regarded as a shapeincluded in a substantially planar shape. In other words, the signalline 103 and the gate insulating layer 112 directly contact with eachother in the whole region interposed between the steps caused by thescan line 101, the scan line 102, and the part of the oxidesemiconductor layers 202 a and 202 b, and the whole of the upper surfaceof the signal line 103 exists coplanarly or substantially coplanarly inthis region.

In the above-described liquid crystal display device, the channel-etchedtransistor 105 which is one kind of transistors having a bottom-gatestructure (see FIG. 1B) is used as a transistor provided in each pixel;however, a transistor having another structure can be used. For example,a channel-stop transistor 210 which is one kind of transistors having abottom-gate structure (see FIG. 9A) or a bottom-contact transistor 220which is one kind of transistors having a bottom-gate structure (seeFIG. 9B) can be used.

Specifically, the channel-stop transistor 210 illustrated in FIG. 9Aincludes: the gate layer 111 provided over the substrate 110; the gateinsulating layer 112 provided over the gate layer 111; the oxidesemiconductor layer 113 provided over the gate insulating layer 112; aninsulating layer 211 which functions as a channel protective layer andis provided over a central portion of the oxide semiconductor layer 113;the one of the source and drain layers 114 a provided over the one endof the oxide semiconductor layer 113 and one end of the insulating layer211; and the other of the source and drain layers 114 b provided overthe other end of the oxide semiconductor layer 113 and the other end ofthe insulating layer 211. Note that the insulating layer 211 can beformed using an inorganic insulating film such as a silicon oxide film,a silicon oxynitride film, an aluminum oxide film, or an aluminumoxynitride film.

The bottom-contact transistor 220 illustrated in FIG. 9B includes: thegate layer 111 provided over the substrate 110; the gate insulatinglayer 112 provided over the gate layer 111; one of the source and drainlayers 114 a and the other of the source and drain layers 114 b providedover the gate insulating layer 112; and the oxide semiconductor layer113 provided over one end of the one of the source and drain layers 114a, one end of the other of the source and drain layers 114 b, and thegate insulating layer 112.

Further, in the case where a transistor provided in each pixel is thechannel-stop transistor 210, an insulating layer 212 can be providedbetween the signal line 103 and the gate insulating layer 112 (see FIG.9C). Note that the insulating layer 212 is an insulating layer formedusing the same material as the insulating layer 211 which functions as achannel protective layer included in the transistor 210. Further, anoxide semiconductor layer can be provided between the gate insulatinglayer 112 and the insulating layer 212 (not illustrated). Note that theoxide semiconductor layer is an oxide semiconductor layer formed usingthe same material as the oxide semiconductor layer 113 included in thetransistor 210. Furthermore, the oxide semiconductor layer and theinsulating layer can be selectively provided only over the scan line 101and the scan line 102 (not illustrated).

Alternatively, a top-gate transistor 230 (see FIG. 10A) can be used asthe transistor 105. Specifically, the top-gate transistor 230illustrated in FIG. 10A includes: a base insulating layer 231 providedover the substrate 110; the oxide semiconductor layer 113 provided overthe base insulating layer 231; the gate insulating layer 112 providedover the oxide semiconductor layer 113; the gate layer 111 provided overthe gate insulating layer 112; the one of the source and drain layers114 a which is in contact with the oxide semiconductor layer 113 in acontact hole 233 a formed in an insulating layer 232 provided over theoxide semiconductor layer 113 and the gate layer 111; and the other ofthe source and drain layers 114 b which is in contact with the oxidesemiconductor layer 113 in a contact hole 233 b formed in the insulatinglayer 232 provided over the oxide semiconductor layer 113 and the gatelayer 111. The other of the source and drain layers 114 b iselectrically connected to the pixel electrode layer 107 in a contacthole 235 formed in an insulating layer 234 provided over the transistor230. In this case, the signal line 103 intersects with the scan lines101 and 102 with the insulating layer 232 interposed therebetween in theregions 117 a and 117 c (see FIG. 10B). Note that the base insulatinglayer 231 can be formed with a single-layer structure or a stackedstructure using one or more of a silicon nitride film, a silicon oxidefilm, a silicon nitride oxide film, and a silicon oxynitride film. Theinsulating layer 232 can be formed with a single-layer structure or astacked structure using one or more of inorganic insulators such as asilicon oxide film, a silicon nitride film, a silicon oxynitride film, asilicon nitride oxide film, an aluminum oxide film, an aluminum nitridefilm, an aluminum oxynitride film, an aluminum nitride oxide film, and ahafnium oxide film. Note that the insulating layer 234 can be formedusing an inorganic insulating film similar to that of the insulatinglayer 232 or using an organic material such as a polyimide, an acrylicresin, or a benzocyclobutene-based resin.

Although one transistor is provided in each pixel in the above-describedliquid crystal display device, two or more transistors can be providedin each pixel. For example, in the case where two transistors areprovided in each pixel to solve a problem relating to the viewing angleof a vertical alignment (VA) mode liquid crystal display device, atransistor including an oxide semiconductor layer can be used as the twotransistors. Here, the liquid crystal display device is regarded as aliquid crystal display device including two leak paths through thetransistors in each pixel. Therefore, in a conventional liquid crystaldisplay device, a voltage applied to a liquid crystal element is held byincreasing the area of capacitors, for example, providing two capacitorsin each pixel. That is, the voltage applied to the liquid crystalelement is held with the aperture ratio sacrificed. In contrast, in aliquid crystal display device disclosed in this specification, leakageof charge through a transistor including an oxide semiconductor layer issignificantly reduced, so that a capacitor itself can be eliminated.That is, the liquid crystal display device disclosed in thisspecification can maintain high aperture ratio even when a plurality oftransistors is provided in each pixel.

(Specific Example of Method for Manufacturing Transistor)

As an example of a transistor which is provided in each pixel of theliquid crystal display device disclosed in this specification, a processfor manufacturing a channel-etched transistor 410 which is one kind oftransistors having a bottom-gate structure is described below withreference to FIGS. 11A to 11D. Although a single-gate transistor isillustrated here, a multi-gate transistor including a plurality ofchannel formation regions can be formed as needed.

A process for manufacturing the transistor 410 over a substrate 400 isdescribed below with reference to FIGS. 11A to 11D.

First, a conductive film is formed over the substrate 400 having aninsulating surface, and a first photolithography step is performedthereon, so that a gate layer 411 is formed. Note that a resist maskused in the process may be formed by an inkjet method. In the case offorming a resist mask by an inkjet method, the manufacturing cost can bereduced because a photomask is not used.

Although there is no particular limitation on a substrate which can beused as the substrate 400 having an insulating surface, it is necessarythat the substrate have at least enough heat resistance to heattreatment to be performed later. For example, a glass substrate made ofbarium borosilicate glass, aluminoborosilicate glass, or the like can beused. In the case where a glass substrate is used and the temperature atwhich the heat treatment performed later is high, a glass substratewhose strain point is higher than or equal to 730° C. is preferablyused.

An insulating layer serving as a base layer may be provided between thesubstrate 400 and the gate layer 411. The base layer has a function ofpreventing diffusion of an impurity element from the substrate 400, andcan be formed with a single-layer structure or a stacked structure usingone or more of a silicon nitride film, a silicon oxide film, a siliconnitride oxide film, and a silicon oxynitride film.

The gate layer 411 can be formed to have a single-layer structure or astacked structure using a metal such as molybdenum, titanium, chromium,tantalum, tungsten, aluminum, copper, neodymium, or scandium or an alloywhich contains any of these metals as its main component.

As a two-layer structure of the gate layer 411, for example, thefollowing structure is preferable: a structure in which a molybdenumlayer is stacked over an aluminum layer, a structure in which amolybdenum layer is stacked over a copper layer, a structure in which atitanium nitride layer or a tantalum nitride layer is stacked over acopper layer, or a structure in which a titanium nitride layer and amolybdenum layer are stacked. As a three-layer structure, a three-layerstructure of a tungsten layer or a tungsten nitride layer, a layer of analloy of aluminum and silicon or an alloy of aluminum and titanium, anda titanium nitride layer or a titanium layer is preferable.

Then, a gate insulating layer 402 is formed over the gate layer 411.

The gate insulating layer 402 can be formed to have a single-layer orstacked structure using one or more of a silicon oxide layer, a siliconnitride layer, a silicon oxynitride layer, a silicon nitride oxidelayer, and an aluminum oxide layer by a plasma CVD method, a sputteringmethod, or the like. For example, a silicon oxynitride layer may beformed by a plasma CVD method using silane (SiH₄), oxygen, and nitrogenas a deposition gas. Furthermore, a high-k material such as hafniumoxide (HfO_(x)) or tantalum oxide (TaO_(x)) can be used as the gateinsulating layer 402. The gate insulating layer 402 is formed to athickness of 100 nm to 500 nm inclusive; in the case where the gateinsulating layer 402 is formed with a stacked structure, for example, afirst gate insulating layer with a thickness of 50 nm to 200 nminclusive and a second gate insulating layer with a thickness of 5 nm to300 nm inclusive are stacked.

Here, a silicon oxynitride layer is formed as the gate insulating layer402 by a plasma CVD method.

As the gate insulating layer 402, a silicon oxynitride layer may beformed with a high density plasma apparatus. Here, the high-densityplasma apparatus refers to an apparatus which can realize a plasmadensity higher than or equal to 1×10¹¹/cm³. For example, plasma isgenerated by application of a microwave power of 3 kW to 6 kW so that aninsulating layer is formed.

As a source gas, silane (SiH₄), nitrous oxide (N₂O), and a rare gas areintroduced into a chamber. Then, high-density plasma is generated at apressure of 10 Pa to 30 Pa, and the insulating layer is formed over thesubstrate having an insulating surface, such as a glass substrate. Afterthat, the supply of silane (SiH₄) is stopped, and plasma treatment maybe performed on a surface of the insulating layer by introducing nitrousoxide (N₂O) and a rare gas without exposure of the insulating layer tothe air. The insulating layer formed through the above process procedurecontributes to high reliability of the transistor even it has a smallthickness.

In forming the gate insulating layer 402, the flow ratio of silane(SiH₄) to nitrous oxide (N₂O) which are introduced into the chamber isin the range of 1:10 to 1:200. As a rare gas which is introduced intothe chamber, helium, argon, krypton, xenon, or the like can be used. Inparticular, argon, which is inexpensive, is preferably used.

Since the insulating layer formed using the high-density plasmaapparatus can have a uniform thickness, the insulating layer hasexcellent ability to cover a step. Further, with the high-density plasmaapparatus, the thickness of a thin insulating film can be controlledprecisely.

The insulating layer formed through the above process procedure isgreatly different from the insulating layer formed using a conventionalparallel plate plasma CVD apparatus. The etching rate of the insulatingfilm formed through the above process procedure is lower than that ofthe insulating film formed using the conventional parallel plate plasmaCVD apparatus by 10% or more or 20% or more in the case where theetching rates with the same etchant are compared to each other. Thus, itcan be said that the insulating layer formed using the high-densityplasma apparatus is a dense film.

The oxide semiconductor which becomes i-type or becomes substantiallyi-type (an oxide semiconductor which is highly purified) in a later stepis extremely sensitive to an interface state or an interface charge;therefore, an interface with the gate insulating layer plays animportant role. For that reason, the gate insulating layer that is to bein contact with a highly purified oxide semiconductor needs to have highquality. Therefore, a high-density plasma CVD apparatus with use ofmicrowaves (2.45 GHz) is preferably employed since a dense andhigh-quality insulating film having high withstand voltage can beformed. When the highly purified oxide semiconductor and thehigh-quality gate insulating layer are in contact with each other, theinterface state density can be reduced and favorable interfacecharacteristics can be obtained. It is important that the gateinsulating layer have lower interface state density with an oxidesemiconductor and a favorable interface as well as having favorable filmquality as a gate insulating layer.

Then, an oxide semiconductor film 430 is formed to a thickness of 2 nmto 200 nm inclusive over the gate insulating layer 402. Note that beforethe oxide semiconductor film 430 is formed by a sputtering method,powdery substances (also referred to as particles or dust) which areattached on a surface of the gate insulating layer 402 are preferablyremoved by reverse sputtering in which an argon gas is introduced andplasma is generated. The reverse sputtering refers to a method in which,without application of a voltage to a target side, an RF power source isused for application of a voltage to the substrate side in an argonatmosphere so that plasma is generated in the vicinity of the substrateto modify a surface of the substrate. Note that instead of an argonatmosphere, a nitrogen atmosphere, a helium atmosphere, an oxygenatmosphere, or the like may be used.

As the oxide semiconductor film 430, an In—Ga—Zn—O-based oxidesemiconductor film, an In—Sn—O-based oxide semiconductor film, anIn—Sn—Zn—O-based oxide semiconductor film, an In—Al—Zn—O-based oxidesemiconductor film, a Sn—Ga—Zn—O-based oxide semiconductor film, anAl—Ga—Zn—O-based oxide semiconductor film, a Sn—Al—Zn—O-based oxidesemiconductor film, an In—Zn—O-based oxide semiconductor film, aSn—Zn—O-based oxide semiconductor film, an Al—Zn—O-based oxidesemiconductor film, an In—O-based oxide semiconductor film, a Sn—O-basedoxide semiconductor film, or a Zn—O-based oxide semiconductor film isused. Here, the oxide semiconductor film 430 is formed by a sputteringmethod with the use of an In—Ga—Zn—O-based metal oxide target. Across-sectional view at this stage is illustrated in FIG. 11A.Alternatively, the oxide semiconductor film 430 can be formed by asputtering method in a rare gas (typically argon) atmosphere, an oxygenatmosphere, or a mixed atmosphere of a rare gas (typically argon) andoxygen. When a sputtering method is employed, deposition may beperformed using a target containing SiO₂ at 2 wt % to 10 wt % inclusiveto allow SiOx (x>0) which inhibits crystallization to be contained inthe oxide semiconductor film 430, so that crystallization can besuppressed in the heat treatment for dehydration or dehydrogenation in alater step.

Here, film deposition is performed using a metal oxide target containingIn, Ga, and Zn (In₂O₃:Ga₂O₃:ZnO=1:1:1 [mol], and In:Ga:Zn=1:1:0.5[atom]). The deposition condition is set as follows: the distancebetween the substrate and the target is 100 mm; the pressure is 0.2 Pa;the direct current (DC) power is 0.5 kW; and the atmosphere is a mixedatmosphere of argon and oxygen (argon:oxygen=30 sccm:20 sccm and theoxygen flow rate is 40%). Note that a pulse direct current (DC) powersource is preferable because powder substances generated in depositioncan be reduced and the film thickness can be made uniform. TheIn—Ga—Zn—O-based film is formed to a thickness of 2 nm to 200 nminclusive. Here, as the oxide semiconductor film, a 20-nm-thickIn—Ga—Zn—O-based film is formed by a sputtering method with the use ofan In—Ga—Zn—O-based metal oxide target. As the metal oxide targetcontaining In, Ga, and Zn, a metal oxide target having a compositionratio of In:Ga:Zn=1:1:1 [atom] or a target having a composition ratio ofIn:Ga:Zn=1:1:2 [atom] can also be used.

Examples of a sputtering method include an RF sputtering method in whicha high-frequency power source is used as a sputtering power source, a DCsputtering method, and a pulsed DC sputtering method in which a bias isapplied in a pulsed manner. An RF sputtering method is mainly used inthe case where an insulating film is formed, and a DC sputtering methodis mainly used in the case where a metal film is formed.

There is also a multi-source sputtering apparatus in which a pluralityof targets of different materials can be set. With the multi-sourcesputtering apparatus, films of different materials can be formed to bestacked in the same chamber, or a film of plural kinds of materials canbe formed by electric discharge at the same time in the same chamber.

In addition, there are a sputtering apparatus provided with a magnetsystem inside the chamber and used for a magnetron sputtering method,and a sputtering apparatus for an ECR sputtering in which plasmagenerated in the presence of microwaves is applied instead of glowdischarge.

Furthermore, as a deposition method by sputtering, there are also areactive sputtering method in which a target substance and a sputteringgas are chemically reacted with each other during deposition to form athin film of a compound thereof, and a bias sputtering in which avoltage is also applied to a substrate during deposition.

Then, the oxide semiconductor film 430 is processed into anisland-shaped oxide semiconductor layer in a second photolithographystep. Note that a resist mask used in the process may be formed by aninkjet method. Formation of the resist mask by an inkjet method needs nophotomask; thus, manufacturing cost can be reduced.

Next, dehydration or dehydrogenation of the oxide semiconductor layer isperformed. The temperature of first heat treatment for dehydration ordehydrogenation is higher than or equal to 400° C. and lower than orequal to 750° C., preferably higher than or equal to 400° C. and lowerthan the strain point of the substrate. Here, the substrate isintroduced into an electric furnace which is one of heat treatmentapparatuses, heat treatment is performed on the oxide semiconductorlayer in a nitrogen atmosphere at 450° C. for one hour, and then, theoxide semiconductor layer is cooled without exposure to the air in orderto avoid entry of water and hydrogen thereto; thus, an oxidesemiconductor layer 431 is obtained (see FIG. 11B).

Note that a heat treatment apparatus is not limited to an electricalfurnace, and may include a device for heating an object to be processedby heat conduction or heat radiation from a heating element such as aresistance heating element. For example, a rapid thermal anneal (RTA)apparatus such as a gas rapid thermal anneal (GRTA) apparatus or a lamprapid thermal anneal (LRTA) apparatus can be used. An LRTA apparatus isan apparatus for heating an object to be processed by radiation of light(an electromagnetic wave) emitted from a lamp such as a halogen lamp, ametal halide lamp, a xenon arc lamp, a carbon arc lamp, a high pressuresodium lamp, or a high pressure mercury lamp. A GRTA apparatus is anapparatus for heat treatment using a high-temperature gas. As the gas,an inert gas which does not react with an object to be processed by heattreatment, such as nitrogen or a rare gas such as argon is used.

For example, as the first heat treatment, GRTA by which the substrate ismoved into an inert gas heated to a high temperature as high as 650° C.to 700° C., heated for several minutes, and moved out of the inert gasheated to the high temperature may be performed. With GRTA,high-temperature heat treatment for a short period can be achieved.

Note that in the first heat treatment, it is preferable that water,hydrogen, and the like be not contained in the atmosphere of nitrogen ora rare gas such as helium, neon, or argon. It is preferable that thepurity of nitrogen or the rare gas such as helium, neon, or argon whichis introduced into a heat treatment apparatus be set to be 6N (99.9999%)or higher, preferably 7N (99.99999%) or higher (that is, the impurityconcentration is 1 ppm or lower, preferably 0.1 ppm or lower).

The first heat treatment of the oxide semiconductor layer can beperformed on the oxide semiconductor film 430 before being processedinto the island-shaped oxide semiconductor layer. In that case, afterthe first heat treatment, the substrate is extracted from the heattreatment apparatus, and then the second photolithography step isperformed.

The heat treatment for dehydration or dehydrogenation of the oxidesemiconductor layer may be performed at any of the following timings:after the oxide semiconductor layer is formed; after a source electrodelayer and a drain electrode layer are formed over the oxidesemiconductor layer; and after a protective insulating film is formedover the source electrode layer and the drain electrode layer.

In the case where an opening portion is formed in the gate insulatinglayer 402, the step of forming the opening portion may be performedeither before or after the oxide semiconductor film 430 is subjected todehydration or dehydrogenation treatment.

Note that the etching of the oxide semiconductor film 430 is not limitedto wet etching, and dry etching may also be used.

As the etching gas for dry etching, a gas including chlorine(chlorine-based gas such as chlorine (Cl₂), boron trichloride (BCl₃),silicon tetrachloride (SiCl₄), or carbon tetrachloride (CCl₄)) ispreferably used.

Alternatively, a gas containing fluorine (fluorine-based gas such ascarbon tetrafluoride (CF₄), sulfur hexafluoride (SF₆), nitrogentrifluoride (NF₃), or trifluoromethane (CHF₃)); hydrogen bromide (HBr);oxygen (O₂); any of these gases to which a rare gas such as helium (He)or argon (Ar) is added; or the like can be used.

As the dry etching method, a parallel plate reactive ion etching (RIE)method or an inductively coupled plasma (ICP) etching method can beused. In order to etch the films into desired shapes, the etchingconditions (the amount of electric power applied to a coil-shapedelectrode, the amount of electric power applied to an electrode on asubstrate side, the temperature of the electrode on the substrate side,and the like) are adjusted as appropriate.

As an etchant used for wet etching, a mixed solution of phosphoric acid,acetic acid, and nitric acid, or the like can be used. In addition,ITO07N (produced by KANTO CHEMICAL CO., INC.) may also be used.

The etchant after the wet etching is removed together with the etchedmaterials by cleaning. The waste liquid including the etchant and thematerial etched off may be purified and the material may be reused. Whena material such as indium included in the oxide semiconductor layer iscollected from the waste liquid after the etching and reused, theresources can be efficiently used and the cost can be reduced.

The etching conditions (such as an etchant, etching time, andtemperature) are appropriately adjusted depending on the material sothat the material can be etched into a desired shape.

Next, a metal conductive film is formed over the gate insulating layer402 and the oxide semiconductor layer 431. The metal conductive film maybe formed by a sputtering method or a vacuum evaporation method. As amaterial of the metal conductive film, an element selected from aluminum(Al), chromium (Cr), copper (Cu), tantalum (Ta), titanium (Ti),molybdenum (Mo), and tungsten (W), an alloy containing any of theseelements as a component, an alloy containing any of these elements incombination, or the like can be given. Alternatively, one or morematerials selected from manganese (Mn), magnesium (Mg), zirconium (Zr),beryllium (Be), and yttrium (Y) may be used. Further, the metalconductive film may have a single-layer structure or a stacked structureof two or more layers. For example, the following structures can begiven: a single-layer structure of an aluminum film including silicon, asingle-layer structure of a copper film, or a film including copper as amain component, a two-layer structure in which a titanium film isstacked over an aluminum film, a two-layer structure in which a copperfilm is stacked over a tantalum nitride film or a copper nitride film,and a three-layer structure in which an aluminum film is stacked over atitanium film and another titanium film is stacked over the aluminumfilm. Alternatively, a film, an alloy film, or a nitride film whichcontains aluminum (Al) and one or more elements selected from titanium(Ti), tantalum (Ta), tungsten (W), molybdenum (Mo), chromium (Cr),neodymium (Nd), and scandium (Sc) may be used.

When heat treatment is performed after the formation of the metalconductive film, it is preferable that the metal conductive film haveheat resistance high enough to withstand the heat treatment.

A resist mask is formed over the metal conductive film by a thirdphotolithography step and etching is selectively performed, so that asource layer 415 a and a drain layer 415 b are formed. Then, the resistmask is removed (see FIG. 11C). Alternatively, the resist mask used inthe process may be formed by an inkjet method. Formation of the resistmask by an inkjet method needs no photomask; thus, manufacturing costcan be reduced.

Note that materials and etching conditions are adjusted as appropriateso that the oxide semiconductor layer 431 is not removed by etching ofthe metal conductive film.

Here, a titanium film is used as the metal conductive film, anIn—Ga—Zn—O based oxide is used for the oxide semiconductor layer 431,and an ammonia hydrogen peroxide mixture (a mixed solution of ammonia,water, and a hydrogen peroxide solution) is used.

Note that, in the third photolithography step, part of the oxidesemiconductor layer 431 may be etched, whereby an oxide semiconductorlayer having a groove (a depressed portion) is formed in some cases.

In order to reduce the number of photomasks used in a photolithographystep and reduce the number of photolithography steps, an etching stepmay be performed with the use of a multi-tone mask which is alight-exposure mask through which light is transmitted to have aplurality of intensities. Since a resist mask formed using a multi-tonemask has a plurality of thicknesses and can be further changed in shapeby performing ashing, the resist mask can be used in a plurality ofetching steps to provide different patterns. Therefore, a resist maskcorresponding to at least two kinds or more of different patterns can beformed by one multi-tone mask. Thus, the number of light-exposure maskscan be reduced and the number of corresponding photolithography stepscan be also reduced, whereby simplification of a process can berealized.

Next, plasma treatment using a gas such as nitrous oxide (N₂O), nitrogen(N₂), or argon (Ar) is performed. By this plasma treatment, absorbedwater and the like attached to an exposed surface of the oxidesemiconductor layer are removed. Plasma treatment may be performed usinga mixed gas of oxygen and argon as well.

After the plasma treatment, an oxide insulating layer 416 which servesas a protective insulating film and is in contact with part of the oxidesemiconductor layer is formed without exposure of the oxidesemiconductor layer to the air.

The oxide insulating layer 416, which has a thickness of at least 1 nm,can be formed as appropriate using a sputtering method or the like, thatis a method with which impurities such as water and hydrogen are notmixed into the oxide insulating layer 416. When hydrogen is contained inthe oxide insulating layer 416, entry of the hydrogen to the oxidesemiconductor layer is caused, whereby a back channel of the oxidesemiconductor layer 431 comes to have a lower resistance (to be n-type)and thus a parasitic channel might be formed. Therefore, it is importantthat a deposition method in which hydrogen is not used is employed inorder to form the oxide insulating layer 416 containing as littlehydrogen as possible.

Here, a 200-nm-thick silicon oxide film is deposited as the oxideinsulating layer 416 by a sputtering method. The substrate temperaturein deposition may be from room temperature to 300° C. inclusive andhere, is 100° C. Formation of a silicon oxide film by a sputteringmethod can be performed in a rare gas (typically argon) atmosphere, anoxygen atmosphere, or an atmosphere of a rare gas (typically argon) andoxygen. As a target, a silicon oxide target or a silicon target can beused. For example, the silicon oxide film can be formed using a silicontarget by a sputtering method in an atmosphere of oxygen and nitrogen.

Next, second heat treatment is performed in an inert gas atmosphere oran oxygen gas atmosphere (preferably at higher than or equal to 200° C.and lower than or equal to 400° C., e.g., higher than or equal to 250°C. and lower than or equal to 350° C.). For example, the second heattreatment is performed in a nitrogen atmosphere at 250° C. for one hour.Through the second heat treatment, part of the oxide semiconductor layer(a channel formation region) is heated while being in contact with theoxide insulating layer 416. Thus, oxygen is supplied to the part of theoxide semiconductor layer (the channel formation region). Furthermore,hydrogen is transported from the oxide semiconductor layer to the oxideinsulating layer 416 by this heat treatment.

Through the above steps, the oxide semiconductor layer is subjected tothe heat treatment for dehydration or dehydrogenation, and then, thepart of the oxide semiconductor layer (the channel formation region) isselectively made to be in an oxygen excess state. As a result, a channelformation region 413 overlapping with the gate layer 411 becomes i-type,and a source region 414 a overlapping with the source layer 415 a and adrain region 414 b overlapping with the drain layer 415 b are formed ina self-aligned manner. Through the above-described process, thetransistor 410 is formed.

Under severe conditions (e.g., at 85° C. and 2×10⁶ V/cm for 12 hours)such as those in a gate-bias thermal stress test (BT test), if animpurity (such as hydrogen) exists in an oxide semiconductor, the bondbetween the impurity and the main component of the oxide semiconductoris cleaved by a high electric field (B: bias) and high temperature (T:temperature), so that a generated dangling bond induces a drift in thethreshold voltage (V_(th)). On the other hand, by removing impurities,especially hydrogen and water, in an oxide semiconductor as much aspossible and using the high-density plasma CVD apparatus to form a denseand high-quality insulating film with high withstand voltage and goodinterface characteristics between the insulating film and an oxidesemiconductor as described above, a transistor which is stable evenunder severe external environments can be obtained.

An additional heat treatment may be performed at higher than or equal to100° C. lower than or equal to 200° C. for one hour to 30 hours in theair. Here, the heat treatment is performed at 150° C. for 10 hours. Thisheat treatment may be performed at a fixed heating temperature.Alternatively, the following change in the heating temperature may beconducted plural times repeatedly: the heating temperature is increasedfrom room temperature to a temperature of 100° C. to 200° C. inclusiveand then decreased to room temperature. Further, this heat treatment maybe performed before formation of the oxide insulating layer 416 under areduced pressure. Under the reduced pressure, the heat treatment timecan be shortened.

By the formation of the drain region 414 b in part of the oxidesemiconductor layer, which overlaps with the drain layer 415 b,reliability of the transistor can be improved. Specifically, by theformation of the drain region 414 b, a structure in which conductivitycan be varied from the drain layer 415 b to the channel formation region413 through the drain region 414 b can be obtained.

Further the source region or the drain region in the oxide semiconductorlayer is formed in the entire thickness direction in the case where thethickness of the oxide semiconductor layer is 15 nm or less. In the casewhere the thickness of the oxide semiconductor layer is 30 nm to 50 nminclusive, in part of the oxide semiconductor layer, that is, in aregion in the oxide semiconductor layer, which is in contact with thesource layer or the drain layer, and the vicinity thereof, resistance isreduced and the source region or the drain region is formed, while aregion in the oxide semiconductor layer, which is close to the gateinsulating layer, can be made to be i-type.

A protective insulating layer may be further formed over the oxideinsulating layer 416. For example, a silicon nitride film is formed byan RF sputtering method. Since an RF sputtering method has highproductivity, it is preferably used as a deposition method of theprotective insulating layer. As the protective insulating layer, aninorganic insulating film which does not include impurities such asmoisture, a hydrogen ion, and OH⁻ and blocks entry of these species fromthe outside is used; for example, a silicon nitride film, an aluminumnitride film, a silicon nitride oxide film, an aluminum oxynitride film,or the like is used. Here, as the protective insulating layer, aprotective insulating layer 403 is formed using a silicon nitride film(see FIG. 11D).

(Variety of Electronic Device on which Liquid Crystal Display Device isMounted)

Examples of an electronic device on which the liquid crystal displaydevice disclosed in this specification is mounted are described withreference to FIGS. 12A to 12F.

FIG. 12A illustrates a laptop personal computer, which includes a mainbody 2201, a housing 2202, a display portion 2203, a keyboard 2204, andthe like.

FIG. 12B illustrates a personal digital assistant (PDA), which includesa main body 2211 provided with a display portion 2213, an externalinterface 2215, operation buttons 2214, and the like. A stylus 2212 foroperation is included as an accessory.

FIG. 12C illustrates an e-book reader 2220 as an example of anelectronic paper. The e-book reader 2220 includes two housings, ahousing 2221 and a housing 2223. The housings 2221 and 2223 are boundwith each other by an axis portion 2237, along which the e-book reader2220 can be opened and closed. With such a structure, the e-book reader2220 can be used as a paper book.

A display portion 2225 is incorporated in the housing 2221, and adisplay portion 2227 is incorporated in the housing 2223. The displayportion 2225 and the display portion 2227 may display one image ordifferent images. In the structure where the display portions displaydifferent images from each other, for example, the right display portion(the display portion 2225 in FIG. 12C) can display text and the leftdisplay portion (the display portion 2227 in FIG. 12C) can displayimages.

Further, in FIG. 12C, the housing 2221 is provided with an operationportion and the like. For example, the housing 2221 is provided with apower supply switch 2231, operation keys 2233, a speaker 2235, and thelike. With the operation keys 2233, pages can be turned. Note that akeyboard, a pointing device, or the like may also be provided on thesurface of the housing, on which the display portion is provided.Furthermore, an external connection terminal (an earphone terminal, aUSB terminal, a terminal that can be connected to various cables such asan AC adapter and a USB cable, or the like), a recording mediuminsertion portion, and the like may be provided on the back surface orthe side surface of the housing. Further, the e-book reader 2220 mayhave a function of an electronic dictionary.

The e-book reader 2220 may be configured to transmit and receive datawirelessly. Through wireless communication, desired book data or thelike can be purchased and downloaded from an electronic book server.

Note that electronic paper can be applied to devices in a variety offields as long as they display information. For example, electronicpaper can be used for posters, advertisement in vehicles such as trains,display in a variety of cards such as credit cards, and the like inaddition to e-book readers.

FIG. 12D illustrates a mobile phone. The mobile phone includes twohousings, a housing 2240 and a housing 2241. The housing 2241 isprovided with a display panel 2242, a speaker 2243, a microphone 2244, apointing device 2246, a camera lens 2247, an external connectionterminal 2248, and the like. The housing 2240 is provided with a solarcell 2249 which charges the mobile phone, an external memory slot 2250,and the like. An antenna is incorporated in the housing 2241.

The display panel 2242 has a touch panel function. A plurality ofoperation keys 2245 which is displayed as images is illustrated bydashed lines in FIG. 12D. Note that the mobile phone includes a boostercircuit for increasing a voltage output from the solar cell 2249 to avoltage needed for each circuit. Moreover, the mobile phone can includea contactless IC chip, a small recording device, or the like in additionto the above structure.

The display orientation of the display panel 2242 changes as appropriatein accordance with the application mode. Further, the camera lens 2247is provided on the same surface as the display panel 2242, and thus itcan be used as a video phone. The speaker 2243 and the microphone 2244can be used for videophone calls, recording, and playing sound, etc. aswell as voice calls. Moreover, the housings 2240 and 2241 in a statewhere they are developed as illustrated in FIG. 12D can be slid so thatone is lapped over the other; therefore, the size of the mobile phonecan be reduced, which makes the mobile phone suitable for being carried.

The external connection terminal 2248 can be connected to a variety ofcables such as an AC adapter or a USB cable, which enables charging ofthe mobile phone and data communication. Moreover, a larger amount ofdata can be saved and moved by inserting a recording medium to theexternal memory slot 2250. Further, in addition to the above functions,an infrared communication function, a television reception function, orthe like may be provided.

FIG. 12E illustrates a digital camera, which includes a main body 2261,a display portion (A) 2267, an eyepiece 2263, an operation switch 2264,a display portion (B) 2265, a battery 2266, and the like.

FIG. 12F illustrates a television set 2270, which includes a displayportion 2273 incorporated in a housing 2271. The display portion 2273can display images. Here, the housing 2271 is supported by a stand 2275.

The television set 2270 can be operated by an operation switch of thehousing 2271 or a separate remote controller 2280. Channels and volumecan be controlled with operation keys 2279 of the remote controller 2280so that an image displayed on the display portion 2273 can becontrolled. Moreover, the remote controller 2280 may have a displayportion 2277 in which the information outgoing from the remotecontroller 2280 is displayed.

Note that the television set 2270 is preferably provided with areceiver, a modem, and the like. A general television broadcast can bereceived with the receiver. Moreover, when the television set isconnected to a communication network with or without wires via themodem, one-way (from a sender to a receiver) or two-way (between asender and a receiver or between receivers) data communication can beperformed.

This application is based on Japanese Patent Application serial no.2010-042584 filed with Japan Patent Office on Feb. 26, 2010, the entirecontents of which are hereby incorporated by reference.

1. A display device comprising: a first scan line over a substrate; asecond scan line adjacent to the first scan line; a first insulatinglayer over the first scan line and the second scan line; an oxidesemiconductor layer over the first insulating layer, wherein the oxidesemiconductor layer comprises a channel formation region overlappingwith the first scan line; a signal line over and electrically connectedto the oxide semiconductor layer; an inorganic insulating layer over thesignal line; and a pixel electrode electrically connected to the oxidesemiconductor layer, wherein the signal line intersects the first scanline and the second scan line, wherein no conductive layer is providedbetween the signal line and the substrate in a region between the firstscan line and the second scan line, wherein the display device has aresolution of 60 ppi or more, wherein the display device is a liquidcrystal display device, and wherein frequency of rewriting a data signalin a pixel is changeable, the pixel comprising the pixel electrode. 2.The display device according to claim 1, wherein the oxide semiconductorlayer comprises indium, gallium, and zinc.
 3. The display deviceaccording to claim 2, wherein the frequency of rewriting the data signalis able to be higher than 60 Hz.
 4. The display device according toclaim 1, wherein a size of the display device is 40 inches or more. 5.The display device according to claim 1, wherein off-state current of atransistor comprising the oxide semiconductor layer is smaller than orequal to 1×10⁻¹² A.
 6. The display device according to claim 1, whereinthe pixel comprises no capacitor.
 7. The display device according toclaim 1, wherein the display device is driven at a double-frame rate ora higher rate than the double-frame rate.
 8. The display deviceaccording to claim 1, wherein a vertical electric field is applied to aliquid crystal material of the display device.
 9. The display deviceaccording to claim 1, wherein a gap between the signal line and thepixel electrode in a top view is smaller than a gap between the firstscan line and the pixel electrode in a top view.
 10. The display deviceaccording to claim 9, wherein the first scan line and the second scanline each comprise no metal layer of aluminum.
 11. The display deviceaccording to claim 10, wherein the first scan line and the second scanline each comprise copper.
 12. A display device comprising: a first scanline over a substrate; a second scan line adjacent to the first scanline; a first insulating layer over the first scan line and the secondscan line; an oxide semiconductor layer over the first insulating layer,wherein the oxide semiconductor layer comprises a channel formationregion overlapping with the first scan line; a signal line over andelectrically connected to the oxide semiconductor layer; a metal layerover the oxide semiconductor layer; an inorganic insulating layer overthe signal line and the metal layer, wherein the inorganic insulatinglayer is in contact with a top surface of the oxide semiconductor layerand comprises silicon and oxygen; an organic insulating layer over theinorganic insulating layer; and a pixel electrode over the inorganicinsulating layer, the pixel electrode being electrically connected tothe oxide semiconductor layer through the metal layer, wherein thesignal line intersects the first scan line and the second scan line,wherein no conductive layer is provided between the signal line and thesubstrate in a region between the first scan line and the second scanline, wherein the display device has a resolution of 60 ppi or more,wherein the display device is a liquid crystal display device, whereinfrequency of rewriting a data signal in a pixel is able to be higherthan 60 Hz, the pixel comprising the pixel electrode, wherein the firstscan line has a stacked structure comprising a first layer comprisingtitanium, tantalum or molybdenum and a second layer comprising copper ortungsten, wherein the first insulating layer has a stacked structurecomprising a third layer comprising silicon and nitrogen, and a fourthlayer comprising silicon and oxygen over the third layer, wherein themetal layer has a stacked structure comprising a fifth layer comprisingaluminum or copper and a sixth layer comprising titanium or molybdenum,and wherein the oxide semiconductor layer comprises indium, gallium, andzinc.
 13. The display device according to claim 12, wherein a size ofthe display device is 40 inches or more.
 14. The display deviceaccording to claim 12, wherein off-state current of a transistorcomprising the oxide semiconductor layer is smaller than or equal to1×10⁻¹² A.
 15. The display device according to claim 12, wherein thepixel comprises no capacitor.
 16. The display device according to claim12, wherein the display device is driven at a double-frame rate or ahigher rate than the double-frame rate.
 17. The display device accordingto claim 12, wherein a vertical electric field is applied to a liquidcrystal material of the display device.
 18. The display device accordingto claim 12, wherein a gap between the signal line and the pixelelectrode in a top view is smaller than a gap between the first scanline and the pixel electrode in a top view.
 19. The display deviceaccording to claim 18, wherein the first scan line and the second scanline each comprise no metal layer of aluminum.
 20. The display deviceaccording to claim 19, wherein the first scan line and the second scanline each comprise copper.
 21. A display device comprising: a scan line;an oxide semiconductor layer over the scan line, the oxide semiconductorlayer overlapping with the scan line; a signal line over andelectrically connected to the oxide semiconductor layer; an inorganicinsulating layer over the signal line; and a pixel electrodeelectrically connected to the oxide semiconductor layer, wherein thedisplay device has a resolution of 60 ppi or more, wherein the displaydevice is a liquid crystal display device, wherein frequency ofrewriting a data signal in a pixel is changeable and is able to behigher than 60 Hz, the pixel comprising the pixel electrode, wherein theoxide semiconductor layer comprises indium, gallium, and zinc, andwherein off-state current of a transistor comprising the oxidesemiconductor layer is smaller than or equal to 1×10⁻¹² A.
 22. Thedisplay device according to claim 21, wherein the pixel electrode doesnot overlap with the signal line.